Beilstein J. Nanotechnol.2019,10, 1125–1130, doi:10.3762/bjnano.10.112
irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT.
Keywords: metal oxide; photo-induced instabilities; photon energy; thermal annealing; thin-filmtransistor (TFT) device; Introduction
The rapid process of industrialization and
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Figure 1:
Transfer characteristics of the devices annealed at different temperatures.